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IXFH15N80Q Real Image
Same model may have multiple batches, images only for reference.

IXFH15N80Q

Part No IXFH15N80Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 15A TO-247AD
Datasheet
IXFH15N80Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 4mA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 4300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 7.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049379-IXFH15N80Q
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH15N80Q CAD Model

Description

The IXFH15N80Q is an active electronic component manufactured by IXYS.

  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current @ 25°C: 15A (Tc)
  • Maximum Rds On @ Id, Vgs: 600 mOhm @ 7.5A, 10V
  • Gate-Source Threshold Voltage: 4.5V @ 4mA
  • Maximum Gate Charge: 90nC @ 10V
  • Maximum Input Capacitance: 4300pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2599 $67.7970
70+ $1.8537 $129.7590
110+ $1.7968 $197.6480
150+ $1.7386 $260.7900
195+ $1.6803 $327.6585
260+ $1.5071 $391.8460
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Availability: 16,003 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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