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IXFH23N80Q Real Image
Same model may have multiple batches, images only for reference.

IXFH23N80Q

Part No IXFH23N80Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 23A TO-247
Datasheet
IXFH23N80Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 3mA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 4900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 420 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049399-IXFH23N80Q
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH23N80Q CAD Model

Description

The IXFH23N80Q from IXYS is a high-quality MOSFET with a maximum power dissipation of 500W (Tc).

  • Part Number: 1049399-IXFH23N80Q
  • Case: TO-247AD (IXFH)
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 23A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 3mA
  • Maximum Gate Charge: 130nC @ 10V
  • Popularity Rating: Medium
  • Supply and Demand Status: Sufficient
  • Manufacturer: IXYS
  • Category: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $9.0332 $72.2656
18+ $7.4124 $133.4232
28+ $7.1808 $201.0624
38+ $6.9479 $264.0202
49+ $6.7164 $329.1036
65+ $6.0217 $391.4105
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Availability: 16,900 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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