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Same model may have multiple batches, images only for reference.
IXFH96N20P Real Image
Same model may have multiple batches, images only for reference.

IXFH96N20P

Part No IXFH96N20P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 96A TO-247
Datasheet
IXFH96N20P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 4mA
Max Gate Charge 145nC @ 10V
Max Input Capacitance 4800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 600W (Tc)
Maximum Rds On at Id,Vgs 24 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049462-IXFH96N20P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH96N20P CAD Model

Description

IXFH96N20P is a MOSFET electronic component manufactured by IXYS. Its supply and demand status is sufficient.

  • Category: Discrete Semiconductor Products
  • Power Dissipation: 600W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 96A (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Rds On @ Id, Vgs: 24 mOhm @ 500mA, 10V
  • Packaging: TO-247AD (IXFH)

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $9.2151 $64.5057
16+ $7.5611 $120.9776
24+ $7.3249 $175.7976
33+ $7.0886 $233.9238
43+ $6.8523 $294.6489
57+ $6.1434 $350.1738
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Availability: 4,900 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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