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IXFK24N100Q3

Name: IXFK24N100Q3
Brand: IXYS
SKU: 608399
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXFK24N100Q3
Manufacturer	IXYS
Catalog	FETs - Single
Description	Advance Technical Information \| MOSFET N-CH 1000V 24A TO-264
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	1000V
Id - Continuous Drain Current	24A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	440mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id	6.5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs	140nC at 10V
Gate Source Voltage (Maximum)	±30V
Input Capacitance (Ciss) (Maximum) at Vds	7200pF at 25V
Power Dissipation (Maximum)	1000W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-264AA (IXFK)
Manufacturer Package	TO-264-3, TO-264AA
Manufacturer Pack Quantity	25
MSL Level	1 (Unlimited)
Win Source Part Number	1191087-IXFK24N100Q3
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXFK24N100Q3 CAD Model

Alternative Products

Description

The IXYS MOSFET is a high-performance transistor with a N-Channel polarity manufactured by IXYS.

Drive Voltage: 10V
Drain-Source Breakdown Voltage: 1000V
Power Dissipation: 1000W
Continuous Drain Current: 24A
Rds On: 440mOhm @ 12A, 10V
Gate Charge: 140nC @ 10V
Input Capacitance: 7200pF @ 25V
Package: TO-264AA (IXFK)
Operating Temperature: -55°C to 150°C
Ideal for: Use in Discrete Semiconductor Products

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
1+	$77.1940	$77.1940
2+	$63.3387	$126.6774
3+	$61.3594	$184.0782
4+	$59.3800	$237.5200
5+	$57.4007	$287.0035
6+	$51.4627	$308.7762

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

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