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IXFK66N50Q2

Part No IXFK66N50Q2
Manufacturer IXYS
Catalog FETs - Single
Description HiPerFET Power MOSFETs Q2-Class | MOSFET N-CH 500V 66A TO-264
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 66A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 80mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs 200nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 8400pF at 25V
Power Dissipation (Maximum) 735W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-264AA (IXFK)
Manufacturer Package TO-264-3, TO-264AA
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1191102-IXFK66N50Q2
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFK66N50Q2 CAD Model

Description

The IXYS IXFK66N50Q2 is a MOSFET transistor that has a Vds - Drain-Source Breakdown Voltage of 500V and an Id - Continuous Drain Current of 66A.

  • Vds - Drain-Source Breakdown Voltage: 500V
  • Id - Continuous Drain Current: 66A
  • Series: TO-264AA (IXFK)
  • Manufacturer Pack Quantity: 25
  • Status: Obsolete
  • Supply and Demand Status: Limited
  • Power Dissipation: 735W
  • Input Capacitance: 8400pF @ 25V
  • Description: It is a valuable asset for those who require its unique features and capabilities.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $46.9219 $93.8438
3+ $38.5008 $115.5024
5+ $37.2973 $186.4865
7+ $36.0938 $252.6566
9+ $34.8914 $314.0226
12+ $31.2820 $375.3840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,625 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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