IXFN210N20P is a chassis mount type of electronic component that is designed for discrete semiconductor products by IXYS HiPerFET MOSFET.

• Maximum Drain-Source Voltage: 200V
• Power Dissipation: 1070W (Tc)
• Current-Continuous Drain (Id): 188A
• Rds On (Maximum) @ Id, Vgs: 10.5 mOhm @ 105A, 10V
• Gate Charge (Qg) (Maximum) @ Vgs: 255nC @ 10V
• Input Capacitance (Ciss) (Maximum) @ Vds: 18600pF @ 25V
• Type: N-channel type MOSFET
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Maximum) @ Id: 4.5V @ 8mA
• Vgs (Maximum): ±20V
• Package: SOT-227B package
• Introduction Date: May 26, 2010
• Estimated EOL Date: 2024