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Same model may have multiple batches, images only for reference.
IXFN26N90 Real Image
Same model may have multiple batches, images only for reference.

IXFN26N90

Part No IXFN26N90
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 26A SOT-227B / N-Channel 900 V 26A (Tc) 600W (Tc) Chassis Mount SOT-227B
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10800 pF @ 25 V
Power Dissipation (Max) 600W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number IXFN26N90-NDR
Standard Package 10
Win Source Part Number 1323873-IXFN26N90
Ultra Librarian 3D Model Ultra Librarian IXFN26N90 CAD Model

Description

The IXFN26N90 from IXYS is an N-Channel MOSFET discrete semiconductor product that comes in a tube packaging.

  • Mounting: chassis mount
  • Case or Package: SOT-227-4 miniBLOC
  • Drain to Source Voltage: 900V
  • Continuous Drain Current: 26A @ 25°C
  • New Designs: not for new designs
  • ROHS3 compliant: true

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