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IXFN27N80 Real Image
Same model may have multiple batches, images only for reference.

IXFN27N80

Part No IXFN27N80
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 27A SOT-227B
Datasheet
IXFN27N80 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
Rds On (Max) @ Id, Vgs 300mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 400 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9740 pF @ 25 V
Power Dissipation (Max) 520W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN27
Standard Package 10 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 876085-IXFN27N80
Ultra Librarian 3D Model Ultra Librarian IXFN27N80 CAD Model

Description

The IXFN27N80 is a high-performance N-Channel MOSFET designed for various applications in discrete semiconductor products.

  • Series: HiPerFET™
  • Drain-to-Source Voltage: 800V
  • Continuous Drain Current: 27A
  • On-Resistance: 300mOhm @ 13.5A and 10V
  • Gate Charge: 400nC @ 10V
  • Operating Temperature Range: -55°C to 150°C
  • Mounting: chassis mountable
  • Package: SOT-227-4 miniBLOC package
  • Applications: industrial, automotive, or other applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.6551 $60.5163
30+ $3.8195 $114.5850
46+ $3.7003 $170.2138
63+ $3.5809 $225.5967
81+ $3.4615 $280.3815
109+ $3.1034 $338.2706
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Availability: 529 pieces
MOQ: 13 pcs
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