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Same model may have multiple batches, images only for reference.
IXFN32N120P Real Image
Same model may have multiple batches, images only for reference.

IXFN32N120P

Part No IXFN32N120P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1200V 32A SOT-227B / Trans MOSFET N-CH 1.2KV 32A 4-Pin SOT-227B
Datasheet
IXFN32N120P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series Polar
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1200V
Current - Continuous Drain (Id) @ 25°C 32A
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 6.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 360nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 21000pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1000W (Tc)
Rds On (Maximum) @ Id, Vgs 310 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Manufacturer Package SOT-227B
Package SOT-227-4, miniBLOC
Win Source Part Number 777622-IXFN32N120P
Popularity Medium
Supply and Demand Status Limited
Family Name IXFN32N120P
Introduction Date March 09, 2010
ECCN EAR99
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IXFN32N120P CAD Model

Description

The IXFN32N120P is a N-channel MOSFET transistor from the Polar series, manufactured by IXYS.

  • Mounting Style: Chassis Mount
  • Drain-source voltage: 1200V
  • Continuous drain current @ 25°C: 32A
  • Maximum on-resistance: 310 mOhm @ 500mA, 10V
  • Gate charge @ 10V: 360nC
  • Input capacitance @ 25V: 21000pF
  • Maximum gate-source voltage: ±30V
  • Gate-source voltage threshold: 6.5V @ 1mA
  • Package: SOT-227-4, miniBLOC
  • Power dissipation: 1000W
  • Estimated EOL: 2027

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $85.3963 $85.3963
2+ $82.7277 $165.4554
3+ $80.0591 $240.1773
4+ $77.3904 $309.5616
5+ $69.3845 $346.9225
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