IXFN32N80P

Part No IXFN32N80P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 29A SOT-227B / N-Channel 800 V 29A (Tc) 625W (Tc) Chassis Mount SOT-227B
Datasheet
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Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 8820 pF @ 25 V
Power Dissipation (Max) 625W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXFN32
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1324576-IXFN32N80P

Description

The IXFN32N80P is a HiPerFET MOSFET N-Channel transistor with a drain-source voltage of 800V and a continuous drain current of 29A (Tc). The gate charge (Qg) (Max) @ Vgs is 150 nC @ 10 V and the input capacitance (Ciss) (Max) @ Vds is 8820 pF @ 25 V. The technology used is MOSFET (Metal Oxide) and the package/case is SOT-227-4/miniBLOC. The IXFN32N80P is ideal for use in Discrete Semiconductor Products and Transistors - FETs, MOSFETs - Single.

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