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IXFN32N80P

Name: IXFN32N80P
Brand: IXYS
SKU: 1324576
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IXFN32N80P
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 800V 29A SOT-227B / N-Channel 800 V 29A (Tc) 625W (Tc) Chassis Mount SOT-227B
Datasheet	IXFN32N80P Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer	IXYS
Packaging	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	270mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	8820 pF @ 25 V
Power Dissipation (Max)	625W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	Chassis Mount
Supplier Device Package	SOT-227B
Case / Package	SOT-227-4, miniBLOC
Base Product Number	IXFN32
RoHS Status	ROHS3 Compliant
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	10
Win Source Part Number	1324576-IXFN32N80P
Ultra Librarian 3D Model	Ultra Librarian IXFN32N80P CAD Model

Alternative Products

Description

The IXYS IXFN32N80P is a HiPerFET MOSFET N-Channel transistor with a drain-source voltage of 800V and a continuous drain current of 29A (Tc).

Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 25 V
Technology: MOSFET (Metal Oxide)
Package/Case: SOT-227-4/miniBLOC

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
2+	$25.9731	$51.9462
5+	$21.3112	$106.5560
8+	$20.6453	$165.1624
11+	$19.9793	$219.7723
13+	$19.3133	$251.0729
18+	$17.3154	$311.6772

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 60 pieces

MOQ: 2 pcs

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