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Same model may have multiple batches, images only for reference.
IXFN36N100 Real Image
Same model may have multiple batches, images only for reference.

IXFN36N100

Part No IXFN36N100
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1KV 36A SOT-227B / N-Channel 1000 V 36A (Tc) 700W (Tc) Chassis Mount SOT-227B
Datasheet
IXFN36N100 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 380 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9200 pF @ 25 V
Power Dissipation (Max) 700W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number IXFN36N100-NDR
Standard Package 10
Win Source Part Number 1323869-IXFN36N100
Ultra Librarian 3D Model Ultra Librarian IXFN36N100 CAD Model

Description

The IXFN36N100 from IXYS is a MOSFET transistor that is widely used in various applications.

  • Maximum Drain to Source Voltage: 1000V
  • Continuous Drain Current: 36A (Tc)
  • Maximum Rds On: 240mOhm @ 500mA, 10V
  • Maximum Gate Charge: 380 nC @ 10 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $37.3570 $74.7140
4+ $30.6519 $122.6076
6+ $29.6941 $178.1646
7+ $28.7362 $201.1534
9+ $27.7783 $250.0047
13+ $24.9047 $323.7611
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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