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Same model may have multiple batches, images only for reference.
IXFN44N80Q3 Real Image
Same model may have multiple batches, images only for reference.

IXFN44N80Q3

Part No IXFN44N80Q3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 37A SOT227B / N-Channel 800 V 37A (Tc) 780W (Tc) Chassis Mount SOT-227B
Datasheet
IXFN44N80Q3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 9840 pF @ 25 V
Power Dissipation (Max) 780W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXFN44
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -IXFN44N80Q3
Standard Package 10
Win Source Part Number 1324586-IXFN44N80Q3
Ultra Librarian 3D Model Ultra Librarian IXFN44N80Q3 CAD Model

Description

The IXFN44N80Q3 is a high voltage N-channel MOSFET designed for use in a wide range of applications. With a drain-to-source voltage of 800V and a continuous drain current of 37A, this MOSFET is capable of delivering high power output while maintaining low on-resistance of 190mOhm at 22A and 10V.

  • Package: SOT-227B package
  • Temperature Range: -55°C to 150°C
  • Gate Charge: 185nC @ 10V
  • Input Capacitance: 9840pF @ 25V
  • Power Dissipation: 780W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $88.6192 $88.6192
2+ $72.7133 $145.4266
3+ $70.4411 $211.3233
4+ $68.1687 $272.6748
5+ $65.8964 $329.4820
6+ $59.0796 $354.4776
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