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Same model may have multiple batches, images only for reference.
IXFN55N50F Real Image
Same model may have multiple batches, images only for reference.

IXFN55N50F

Part No IXFN55N50F
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description HiPerRF Power MOSFETs
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerRF
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs 195nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6700pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 600W (Tc)
Rds On (Maximum) @ Id, Vgs 85 mOhm @ 27.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Manufacturer Package SOT-227B
Package SOT-227-4, miniBLOC
Win Source Part Number 1191121-IXFN55N50F
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXFN55N50F
Introduction Date September 14, 2001
ECCN EAR99
Halogen Free Unknown
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IXFN55N50F CAD Model

Description

The IXFN55N50F is a MOSFET transistor manufactured by IXYS.

  • Series: HiPerRF
  • Current Rating: 55A
  • Package: SOT-227-4 miniBLOC
  • Mounting: Chassis mounting
  • Application: Discrete semiconductor products
  • Voltage Rating: 500V
  • Power Dissipation: 600W
  • Gate Charge: 195nC @ 10V
  • Input Capacitance: 6700pF @ 25V
  • Drain-Source Voltage: 500V
  • Vgs: +/-20V
  • Alternative Parts: FA57SA50LC, FA57SA50LCPBF, and STE53NA50
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $22.1591 $66.4773
6+ $18.1818 $109.0908
9+ $17.6136 $158.5224
12+ $17.0454 $204.5448
16+ $16.4773 $263.6368
21+ $14.7727 $310.2267
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Availability: 6,899 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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