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Same model may have multiple batches, images only for reference.
IXFN82N60P Real Image
Same model may have multiple batches, images only for reference.

IXFN82N60P

Part No IXFN82N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 72A SOT-227B
Datasheet
IXFN82N60P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 72A
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 8mA
Max Gate Charge 240nC @ 10V
Max Input Capacitance 23000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 1040W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 41A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Chassis Mount
Case / Package SOT-227B
Dimension SOT-227-4, miniBLOC
Win Source Part Number 1003992-IXFN82N60P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXFN82N60P CAD Model

Description

IXYS's 1003992-IXFN82N60P is a MOSFET with a polarity of N-Channel and a power dissipation of 1040W (Tc).

  • Package: SOT-227B
  • Mounting: chassis
  • Supply and Demand Status: balanced
  • Win Source Part Number: 1003992-IXFN82N60P
  • Category: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $54.5454 $54.5454
3+ $44.7552 $134.2656
4+ $43.3566 $173.4264
5+ $41.9580 $209.7900
7+ $40.5594 $283.9158
9+ $36.3636 $327.2724
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