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IXFP20N85X

Part No IXFP20N85X
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 850V 20A TO220AB  /  N-Channel 850 V 20A (Tc) 540W (Tc) Through Hole TO-220-3
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Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Ultra X
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 850 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 330mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1660 pF @ 25 V
Power Dissipation (Max) 540W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXFP20
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 962089-IXFP20N85X
Ultra Librarian 3D Model Ultra Librarian IXFP20N85X CAD Model

Description

The electronic component with Win Source Part Number 962089-IXFP20N85X is a MOSFET (Metal Oxide) with N-Channel FET Type.

  • FET Type: N-Channel
  • Series: HiPerFET™, Ultra X
  • Package/Case: TO-220-3
  • Standard Package: 50
  • Power Dissipation: 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
  • Ciss (Max) @ Vds: 1660 pF @ 25 V
  • Qg (Max) @ Vgs: 63 nC @ 10 V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • ECCN: EAR99
  • MSL Level: 1 (Unlimited)

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.6008 $59.8104
31+ $3.7749 $117.0219
48+ $3.6570 $175.5360
66+ $3.5389 $233.5674
85+ $3.4210 $290.7850
113+ $3.0671 $346.5823
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,494 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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