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IXFP5N100P

Part No IXFP5N100P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 5A TO220AB / N-Channel 1000 V 5A (Tc) 250W (Tc) Through Hole TO-220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Polar
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.8Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.4 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1830 pF @ 25 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXFP5N100
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -IXFP5N100P
Standard Package 50
Win Source Part Number 1066180-IXFP5N100P
Ultra Librarian 3D Model Ultra Librarian IXFP5N100P CAD Model

Description

The IXFP5N100P is an N-channel HiPerFET™ MOSFET with a drain to source voltage of 1000V and a continuous drain current of 5A at 25°C.

  • Drain to Source Voltage: 1000V
  • Continuous Drain Current: 5A @ 25°C
  • Rds On: 2.8Ohm @ 500mA, 10V
  • Gate Charge: 33.4 nC @ 10V
  • Package: TO-220-3
  • Input Capacitance: 1830pF @ 25V
  • Maximum Vgs: ±30V
  • Operating Temperature: -55°C to 150°C
  • Suitable for: high voltage applications such as power supplies, inverters, and motor drives.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.0890 $56.6230
16+ $6.6372 $106.1952
24+ $6.4298 $154.3152
33+ $6.2223 $205.3359
42+ $6.0149 $252.6258
56+ $5.3927 $301.9912
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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