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Same model may have multiple batches, images only for reference.
IXFP76N15T2 Real Image
Same model may have multiple batches, images only for reference.

IXFP76N15T2

Part No IXFP76N15T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 76A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 97nC @ 10V
Max Input Capacitance 5800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 350W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 38A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205688-IXFP76N15T2
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXFP76N15T2 CAD Model

Description

The IXFP76N15T2 is an N-channel MOSFET with a drain-source breakdown voltage of 150V and a continuous drain current of 76A @ 25°C.

  • Power Dissipation: 350W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Mounting: Through Hole
  • Package: TO-220AB
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 97nC @ 10V
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Package Quantity: 50

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0247 $50.6175
61+ $1.6613 $101.3393
94+ $1.6093 $151.2742
129+ $1.5574 $200.9046
167+ $1.5055 $251.4185
223+ $1.3498 $301.0054
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Availability: 5,720 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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