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Same model may have multiple batches, images only for reference.
IXFR24N100Q3 Real Image
Same model may have multiple batches, images only for reference.

IXFR24N100Q3

Part No IXFR24N100Q3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 18A ISOPLUS247 / N-Channel 1000 V 18A (Tc) 500W (Tc) Through Hole ISOPLUS247™
Datasheet
IXFR24N100Q3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Q3 Class
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 490mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 7200 pF @ 25 V
Power Dissipation (Max) 500W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS247™
Package / Case TO-247-3
Base Product Number IXFR24
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1022152-IXFR24N100Q3
Ultra Librarian 3D Model Ultra Librarian IXFR24N100Q3 CAD Model

Description

The IXFR24N100Q3 is an N-Channel MOSFET transistor that belongs to the HiPerFET™ series and Q3 class.

  • Drain to Source Voltage: 1000V
  • Continuous Drain Current: 18A @ 25°C
  • Maximum On-Resistance: 490mOhm @ 12A and 10V
  • Gate Threshold Voltage: 6.5V @ 4mA
  • Gate Charge: 140nC @ 10Vgs
  • Designed for: Discrete semiconductor products such as transistors, FETs, and MOSFETs
  • Power Dissipation: 500W @ Tc
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: through-hole TO-247-3 with ISOPLUS247™ supplier device package

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