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Same model may have multiple batches, images only for reference.
IXFR36N60P Real Image
Same model may have multiple batches, images only for reference.

IXFR36N60P

Part No IXFR36N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20A ISOPLUS247
Datasheet
IXFR36N60P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 4mA
Max Gate Charge 102nC @ 10V
Max Input Capacitance 5800pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package ISOPLUS247
Dimension ISOPLUS247
Win Source Part Number 040914-IXFR36N60P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFR36N60P CAD Model

Description

The IXFR36N60P is a N-channel MOSFET manufactured by IXYS.

  • Designed For: High-power switching applications
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 20A
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 5V @ 4mA
  • Maximum On-Resistance: 200mΩ @ 18A and 10V
  • Available In: Through-hole packaging
  • RoHS Compliant: Yes
  • Maximum Power Dissipation: 208W
  • Temperature Range: -55°C to 150°C
  • Suitable Replacement: Other MOSFETs in the same category

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.7233 $60.5097
21+ $5.5174 $115.8654
33+ $5.3442 $176.3586
45+ $5.1721 $232.7445
58+ $5.0000 $290.0000
78+ $4.4826 $349.6428
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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