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IXFX140N30P

Part No IXFX140N30P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 140A PLUS 247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 8mA
Max Gate Charge 185nC @ 10V
Max Input Capacitance 14800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1040W (Tc)
Maximum Rds On at Id,Vgs 24 mOhm @ 70A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PLUS247-3
Dimension TO-247-3
Win Source Part Number 1049530-IXFX140N30P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXFX140N30P CAD Model

Description

The IXFX140N30P is a MOSFET transistor manufactured by IXYS.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 300V
  • Power Dissipation (max): 1040W (Tc)
  • Case/Package: PLUS247-3
  • Dimension: TO-247-3
  • Rds On @ Id, Vgs: 24 mOhm @ 70A, 10V
  • Gate-Source Threshold Voltage: 5V @ 8mA
  • Maximum Gate Charge: 185nC @ 10V
  • Maximum Input Capacitance: 14800pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Mounting: Through Hole
  • Packaging: Tube/Rail
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $62.5624 $62.5624
3+ $51.3333 $153.9999
4+ $49.7292 $198.9168
5+ $48.1251 $240.6255
7+ $46.5209 $325.6463
9+ $41.7084 $375.3756
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30 pieces
Order Increment : 1 pcs
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