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Same model may have multiple batches, images only for reference.
IXGH16N60B2D1 Real Image
Same model may have multiple batches, images only for reference.

IXGH16N60B2D1

Part No IXGH16N60B2D1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 40A 150W TO247
Datasheet
IXGH16N60B2D1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 40A
Pulsed Collector Current 100A
Collector-emitter saturation voltage(Max) 1.95V @ 15V, 12A
Maximum Power Dissipation 150W
Total Switching Energy(Ets) 160μJ (on), 120μJ (off)
Input Type Standard
Gate Charge 24nC
Turn-on and Turn-off delay time 18ns/73ns
Testing Conditions 400V, 12A, 22 Ohm, 15V
Reverse Recovery Time (trr) 30ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049565-IXGH16N60B2D1
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Alternative Energy, Industrial
Ultra Librarian 3D Model Ultra Librarian IXGH16N60B2D1 CAD Model

Description

The IXYS IXGH16N60B2D1 is a PT IGBT transistor manufactured by IXYS.

  • Type: PT IGBT
  • Maximum Collector Current: 40A
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 150W
  • Collector-Emitter Saturation Voltage (Max): 1.95V @ 15V, 12A
  • Total Switching Energy (Ets): 160μJ (on), 120μJ (off)
  • Turn-On Delay Time: 18ns
  • Turn-Off Delay Time: 73ns
  • Reverse Recovery Time (trr): 30ns
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Limited

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