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Same model may have multiple batches, images only for reference.
IXGH40N60C2 Real Image
Same model may have multiple batches, images only for reference.

IXGH40N60C2

Part No IXGH40N60C2
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 75A 300W TO247AD
Datasheet
IXGH40N60C2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 75A
Pulsed Collector Current 200A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 30A
Maximum Power Dissipation 300W
Total Switching Energy(Ets) 200μJ (off)
Input Type Standard
Gate Charge 95nC
Turn-on and Turn-off delay time 18ns/90ns
Testing Conditions 400V, 30A, 3 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049626-IXGH40N60C2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXGH40N60C2 CAD Model

Description

The IXYS IGBT type transistor is a high-performance transistor designed for use in various electronic applications.

  • Maximum current collector: 75A
  • VCEO maximum collector-emitter breakdown voltage: 600V
  • Maximum power dissipation: 300W
  • Pulsed collector current: 200A
  • Collector-emitter saturation voltage: 2.7V @ 15V, 30A
  • Total switching energy: 200μJ (off)
  • Turn-on and turn-off delay time: 18ns/90ns
  • Package: TO-247AD package
  • Mounting: through a hole
  • Status: previously active in the market but is now obsolete (EOL).
  • Popularity: medium in the market
  • Supply and demand status: sufficient

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