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IXTA1N170DHV

Part No IXTA1N170DHV
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1700V 1A TO263 / N-Channel 1700 V 1A (Tc) 290W (Tc) Surface Mount TO-263HV
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Depletion
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 16Ohm @ 500mA, 0V
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3090 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 290W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263HV
Package / Case TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Base Product Number IXTA1
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1349460-IXTA1N170DHV
Ultra Librarian 3D Model Ultra Librarian IXTA1N170DHV CAD Model

Description

The IXYS MOSFET transistor is a N-Channel FET type that features a depletion mode and a drain to source voltage of 1700V.

  • Manufacturer: IXYS
  • FET Type: N-Channel
  • FET Feature: Depletion Mode
  • Voltage - Drain to Source (Vdss): 1700V
  • Power - Max: 290W (Tc)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Series: Depletion
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V

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