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Same model may have multiple batches, images only for reference.
IXTA4N150HV-TRL IXYS
Same model may have multiple batches, images only for reference.

IXTA4N150HV-TRL

Part No IXTA4N150HV-TRL
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1500V 4A TO263HV / N-Channel 1500 V 4A (Tc) 280W (Tc) Surface Mount TO-263HV
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1576 pF @ 25 V
FET Feature -
Power Dissipation (Max) 280W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263HV
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IXTA4
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355081-IXTA4N150HV-TRL
Ultra Librarian 3D Model Ultra Librarian IXTA4N150HV-TRL CAD Model

Description

The IXYS 1355081-IXTA4N150HV-TRL is a N-Channel MOSFET transistor with a drain to source voltage (Vdss) of 1500V and a continuous drain current (Id) of 4A.

  • Manufacturer: IXYS
  • Vdss: 1500V
  • Id: 4A
  • Rds On: 6Ohm @ 2A and 10V
  • Vgs(th): 5V @ 250μA
  • Qg: 44.5nC @ 10V
  • Ciss: 1576pF @ 25V
  • Maximum Power Dissipation: 280W
  • Product Category: Discrete Semiconductor Products - Transistors - FETs
  • Package: TO-263-3, D²Pak
  • Mounting Type: Surface Mount
  • Status: Active

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