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Same model may have multiple batches, images only for reference.
IXTA50N25T Real Image
Same model may have multiple batches, images only for reference.

IXTA50N25T

Part No IXTA50N25T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 50A TO-263
Datasheet
IXTA50N25T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 78nC @ 10V
Max Input Capacitance 4000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 400W (Tc)
Maximum Rds On at Id,Vgs 50 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (IXTA)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205701-IXTA50N25T
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTA50N25T CAD Model

Description

The IXYS IXTA50N25T is a high-performance N-channel MOSFET designed for use in a range of applications, including power supplies, motor control, and lighting.

  • Maximum Power Dissipation: 400W
  • Continuous Drain Current: 50A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 1mA
  • Maximum Gate Charge: 78nC @ 10V
  • Drain-Source Breakdown Voltage: 250V
  • Maximum Rds On: 50 mOhm @ 25A, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Packaging: Tube/rail
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.8190 $57.8280
30+ $3.9542 $118.6260
46+ $3.8306 $176.2076
63+ $3.7070 $233.5410
81+ $3.5834 $290.2554
108+ $3.2127 $346.9716
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Availability: 1,500 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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