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IXTA88N085T7

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	IXTA88N085T7
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 85V 88A TO263-7 / N-Channel 85 V 88A (Tc) 230W (Tc) Surface Mount TO-263-7 (IXTA)
Datasheet	IXTA88N085T7 Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	TrenchMV™
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	85 V
Current - Continuous Drain (Id) @ 25°C	88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	69 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3140 pF @ 25 V
Power Dissipation (Max)	230W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-7 (IXTA)
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Base Product Number	IXTA88
Standard Package	50
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1346700-IXTA88N085T7
Ultra Librarian 3D Model	Ultra Librarian IXTA88N085T7 CAD Model

Alternative Products

Description

IXTA88N085T7 is a N-Channel MOSFET transistor from the TrenchMV™ series of IXYS. IXTA88N085T7 IXYS.

Series: TrenchMV™
Drain to Source Voltage: 85 V
Power Dissipation: 230W (Tc)
Package Type: TO-263-7, D²Pak (6 Leads + Tab)
Mounting: Surface
FET Type: N-Channel
FET Feature: -
Maximum Gate-Source Voltage: ±20V
Operating Temperature Range: -55°C to 175°C (TJ)
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
Current: 88A (Tc)
Rds On: 11mOhm @ 25A, 10V
Vgs(th): 4V @ 100μA
Gate Charge (Qg): 69 nC @ 10 V
Input Capacitance (Ciss): 3140 pF @ 25 V

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