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Same model may have multiple batches, images only for reference.
IXTA180N10T7 Real Image
Same model may have multiple batches, images only for reference.

IXTA180N10T7

Part No IXTA180N10T7
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 180A TO-263-7
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series TrenchMV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 151nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6900pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 480W (Tc)
Rds On (Maximum) @ Id, Vgs 6.4 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package TO-263-7 (IXTA..7)
Package TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 777641-IXTA180N10T7
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTA180N10T7 CAD Model

Description

The IXYS IXTA180N10T7 is a MOSFET transistor manufactured by IXYS.

  • FET Type: N-channel
  • Series: TrenchMV
  • Drain Source Voltage: 100V
  • Power Dissipation (Tc): 480W
  • Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
  • Vgs (Max): ±30V
  • Temperature Range (TJ): -55°C to 175°C
  • Current: 180A (Tc)
  • Rds On (Max) @ 25A, 10V: 6.4 mOhm

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6058 $51.4930
205+ $0.4971 $101.9055
315+ $0.4816 $151.7040
430+ $0.4660 $200.3800
555+ $0.4505 $250.0275
745+ $0.4039 $300.9055
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 47,260 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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