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IXTB30N100L

Name: IXTB30N100L
Brand: IXYS
SKU: 1341019
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXTB30N100L
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 1000V 30A PLUS264 / N-Channel 1000 V 30A (Tc) 800W (Tc) Through Hole PLUS264™
Datasheet	IXTB30N100L Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	Linear
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	450mOhm @ 500mA, 20V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	545 nC @ 20 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	13200 pF @ 25 V
Power Dissipation (Max)	800W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS264™
Package / Case	TO-264-3, TO-264AA
Base Product Number	IXTB30
Standard Package	25
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
California Prop 65	Warning Information
Win Source Part Number	1341019-IXTB30N100L
Ultra Librarian 3D Model	Ultra Librarian IXTB30N100L CAD Model

Alternative Products

Description

IXYS's IXTB30N100L is an N-channel MOSFET with a breakdown voltage of 1000 V and a continuous drain current of 30 A.

Breakdown Voltage: 1000 V
Continuous Drain Current: 30 A
Package: TO-264-3, TO-264AA
Mounting: Through Holes
Gate-Source Voltage: ±30V
Maximum On-State Resistance: 450mOhm @ 500mA and 20V
Input Capacitance: 13200 pF @ 25 V
Gate Charge: 545 nC @ 20 V
Maximum Power Dissipation: 800W @ Tc
Operating Temperature Range: -55°C to 150°C
REACH: Unaffected
ECCN: EAR99
Package: Tube
Standard Package: 25 units
Ideal for: High voltage applications where low on-state resistance and high current ratings are required

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