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Same model may have multiple batches, images only for reference.
IXTC36P15P Real Image
Same model may have multiple batches, images only for reference.

IXTC36P15P

Part No IXTC36P15P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 22A ISOPLUS220 / P-Channel 150 V 22A (Tc) 150W (Tc) Through Hole ISOPLUS220™
Datasheet
IXTC36P15P Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series PolarP™
Package Tube
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2950 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS220™
Package / Case ISOPLUS220™
Base Product Number IXTC36
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346736-IXTC36P15P
Ultra Librarian 3D Model Ultra Librarian IXTC36P15P CAD Model

Description

The IXTC36P15P is a P-Channel MOSFET transistor in the PolarP™ series of Discrete Semiconductor Products.

  • Package: ISOPLUS220™
  • Maximum Power Dissipation: 150W (Tc)
  • Drain to Source Voltage (Vdss): 150 V
  • Continuous Drain Current (Id) @ 25°C: 22A (Tc)
  • On-State Resistance (Max) @ Id, Vgs: 120mOhm @ 18A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V

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