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IXTD4N80P-3J

Part No IXTD4N80P-3J
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 3.6A DIE / N-Channel 800 V 3.6A (Tc) 100W (Tc) Surface Mount Die
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series PolarHV™
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.4Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id 5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 14.2 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 25 V
Power Dissipation (Max) 100W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
Base Product Number IXTD4N
Standard Package 1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346722-IXTD4N80P-3J
Ultra Librarian 3D Model Ultra Librarian IXTD4N80P-3J CAD Model

Description

IXTD4N80P-3J is a N-channel MOSFET (Metal Oxide) from IXYS's PolarHV™ series.

  • Drain to Source Voltage (Vdss): 800 V
  • Power Dissipation (Max): 100W (Tc)
  • Package/Case: Die
  • Mounting: Surface Mountable
  • Vgs (Max): ±30V
  • Temperature Range: -55°C to 150°C (TJ)
  • Product Status: Obsolete
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 100μA
  • Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V

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