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IXTH06N220P3HV

Part No IXTH06N220P3HV
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 2200V 600MA TO247HV / N-Channel 2200 V 600mA (Tc) 104W (Tc) Through Hole TO-247HV
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Polar P3™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2200 V
Current - Continuous Drain (Id) @ 25°C 600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 25 V
Power Dissipation (Max) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247HV
Package / Case TO-247-3 Variant
Base Product Number IXTH06
Standard Package 30
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346849-IXTH06N220P3HV
Ultra Librarian 3D Model Ultra Librarian IXTH06N220P3HV CAD Model

Description

The IXTH06N220P3HV is an N-channel MOSFET transistor that belongs to the Polar P3™ series.

  • Drain to Source Voltage (Vdss): 2200 V
  • Power Dissipation: 104W (Tc)
  • Mounting: Through a hole
  • Package: TO-247-3 Variant
  • Vgs (Max): ±20V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Current continuous drain (Id): 600mA (Tc)
  • Rds On (Max): 80Ohm @ 300mA, 10V
  • Input Capacitance (Ciss) (Max): 290 pF @ 25 V
  • Gate Charge (Qg) (Max): 10.4 nC @ 10 V

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