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Same model may have multiple batches, images only for reference.
IXTH41N25 Real Image
Same model may have multiple batches, images only for reference.

IXTH41N25

Part No IXTH41N25
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 41A TO-247A
Datasheet
IXTH41N25 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 3200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 72 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049806-IXTH41N25
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH41N25 CAD Model

Description

The IXYS 1049806-IXTH41N25 is an N-Channel MOSFET electronic component that is mounted through hole.

  • Maximum Power Dissipation: 300W (Tc)
  • Maximum Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 41A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 110nC @ 10V
  • Maximum Input Capacitance: 3200pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 72 mOhm @ 15A, 10V
  • Win Source Part Number: 1049806-IXTH41N25

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