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Same model may have multiple batches, images only for reference.
IXTK120N25P Real Image
Same model may have multiple batches, images only for reference.

IXTK120N25P

Part No IXTK120N25P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 120A TO-264
Datasheet
IXTK120N25P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 500μA
Max Gate Charge 185nC @ 10V
Max Input Capacitance 8000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700W (Tc)
Maximum Rds On at Id,Vgs 24 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-264 (IXTK)
Dimension TO-264-3, TO-264AA
Win Source Part Number 205705-IXTK120N25P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTK120N25P CAD Model

Description

The IXTK120N25P is an N-channel MOSFET manufactured by IXYS.

  • Package: TO-264 package
  • Drain-Source Breakdown Voltage: 250V
  • Maximum Continuous Drain Current: 120A (Tc) @ 25°C
  • Maximum Rds On: 24 mOhm @ 60A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 5V @ 500μA
  • Maximum Gate Charge: 185nC @ 10V
  • Maximum Input Capacitance: 8000pF @ 25V
  • Temperature Range: -55°C to 175°C (TJ)
  • Power Dissipation (max): 700W (Tc)
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $37.5467 $75.0934
4+ $30.8075 $123.2300
6+ $29.8448 $179.0688
7+ $28.8821 $202.1747
9+ $27.9193 $251.2737
12+ $25.0311 $300.3732
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Availability: 1,700 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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