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Same model may have multiple batches, images only for reference.
SIHFZ48RS-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHFZ48RS-GE3

Part No SIHFZ48RS-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 50A D2PAK
Datasheet
SIHFZ48RS-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 43A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V
Power Dissipation (Max) 190W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHFZ48
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 667215-SIHFZ48RS-GE3
Ultra Librarian 3D Model Ultra Librarian SIHFZ48RS-GE3 CAD Model

Description

The SIHFZ48RS-GE3 is a N-channel MOSFET transistor from Vishay.

  • Category: Discrete Semiconductor Products - Single FETs and MOSFETs
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C: 50A
  • Maximum On-Resistance (Rds On) @ Id, Vgs: 18mOhm @ 43A, 10V
  • Package: TO-263-3, D2PAK
  • Gate Charge (Qg) @ 10V: 110nC
  • Operating Temperature: -55°C to 175°C
  • Suitable for: A wide range of applications in various industries

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