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IXTN22N100L

Part No IXTN22N100L
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 22A SOT227B / N-Channel 1000 V 22A (Tc) 700W (Tc) Chassis Mount SOT-227B
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 600mOhm @ 11A, 20V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 15 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 7050 pF @ 25 V
Power Dissipation (Max) 700W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXTN22
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 611085
Standard Package 10
Win Source Part Number 1324615-IXTN22N100L
Ultra Librarian 3D Model Ultra Librarian IXTN22N100L CAD Model

Description

The IXTN22N100L from IXYS is a discrete semiconductor product that falls under the category of transistors - FETs, MOSFETs - Single. It is an N-channel MOSFET (Metal Oxide) with a drain to source voltage (Vdss) of 1000V.

  • Standard Package: 10
  • Mounting: chassis
  • Supply and Demand Status: currently experiencing a shortage

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