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IXTN62N50L

Part No IXTN62N50L
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 62A SOT227B / N-Channel 500 V 62A (Tc) 800W (Tc) Chassis Mount SOT-227B
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 100mOhm @ 500mA, 20V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 550 nC @ 20 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 11500 pF @ 25 V
Power Dissipation (Max) 800W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXTN62
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -IXTN62N50L
Standard Package 10
Win Source Part Number 1324608-IXTN62N50L
Ultra Librarian 3D Model Ultra Librarian IXTN62N50L CAD Model

Description

The 1324608-IXTN62N50L from IXYS is an N-channel MOSFET transistor with a drain to source voltage of 500V and a continuous drain current of 62A at 25°C.

  • Maximum Rds On: 100mOhm @ 500mA and 20V
  • Package: SOT-227-4, miniBLOC package
  • Gate Charge: 550nC @ 20V
  • Operating Temperature Range: -55°C to 150°C (TJ)

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