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Same model may have multiple batches, images only for reference.
IXTP110N055T2 Real Image
Same model may have multiple batches, images only for reference.

IXTP110N055T2

Part No IXTP110N055T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 110A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 57nC @ 10V
Max Input Capacitance 3060pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 180W (Tc)
Maximum Rds On at Id,Vgs 6.6 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 040917-IXTP110N055T2
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Automotive, Power Management
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXTP110N055T2 CAD Model

Description

The IXYS IXTP110N055T2 is a high-quality MOSFET used in various electronic devices.

  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Power Dissipation: 180W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Polarity: N-channel
  • Mounting: Through hole
  • Gate-Source Threshold Voltage: 4V @ 250μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2624 $58.8224
63+ $1.8563 $116.9469
97+ $1.7983 $174.4351
133+ $1.7403 $231.4599
172+ $1.6823 $289.3556
230+ $1.5082 $346.8860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,943 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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