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Same model may have multiple batches, images only for reference.
IXTP120N04T2 Real Image
Same model may have multiple batches, images only for reference.

IXTP120N04T2

Part No IXTP120N04T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A TO-220
Datasheet
IXTP120N04T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 58nC @ 10V
Max Input Capacitance 3240pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 6.1 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049859-IXTP120N04T2
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXTP120N04T2 CAD Model

Description

IXYS IXTP120N04T2 is an N-Channel MOSFET technology-based electronic component with a maximum Rds On @ Id, Vgs of 6.1 mOhm @ 25A, 10V.

  • Power Dissipation (Max): 200W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Win Source Part Number: 1049859-IXTP120N04T2
  • Status: active
  • Supply and Demand: sufficient
  • Package Type: TO-220AB
  • Maximum Gate-Source Voltage: ±20V

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