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Same model may have multiple batches, images only for reference.
IXTP24P085T Real Image
Same model may have multiple batches, images only for reference.

IXTP24P085T

Part No IXTP24P085T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 85V 24A TO-220
Datasheet
IXTP24P085T Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 85V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 2090pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 65 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205710-IXTP24P085T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTP24P085T CAD Model

Description

The IXYS IXTP24P085T is a P-channel MOSFET designed for use in a range of applications, including power supplies, motor control, and lighting.

  • Maximum Power Dissipation: 83W
  • Continuous Drain Current: 24A @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 41nC @ 10V
  • Drain-Source Breakdown Voltage: 85V
  • Maximum Rds On: 65 mOhm @ 12A, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Packaging: Tube/rail
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9531 $58.5930
75+ $1.6031 $120.2325
115+ $1.5535 $178.6525
155+ $1.5027 $232.9185
200+ $1.4530 $290.6000
270+ $1.3028 $351.7560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,900 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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