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Same model may have multiple batches, images only for reference.
IXTP2N60P Real Image
Same model may have multiple batches, images only for reference.

IXTP2N60P

Part No IXTP2N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2A TO-220
Datasheet
IXTP2N60P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 240pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 55W (Tc)
Maximum Rds On at Id,Vgs 5.1 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049884-IXTP2N60P
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXTP2N60P CAD Model

Description

The IXTP2N60P is an N-channel MOSFET manufactured by IXYS.

  • Maximum Power Dissipation: 55W
  • Drain-Source Breakdown Voltage: 600V
  • Supply and Demand Status: Balanced
  • RoHS Compliant: Yes
  • Package: TO-220AB

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Quantity Unit Price Ext. Price
18+ $3.3229 $59.8122
43+ $2.7270 $117.2610
66+ $2.6415 $174.3390
91+ $2.5560 $232.5960
117+ $2.4705 $289.0485
157+ $2.2153 $347.8021
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Availability: 5,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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