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Same model may have multiple batches, images only for reference.
IXTP5N60P Real Image
Same model may have multiple batches, images only for reference.

IXTP5N60P

Part No IXTP5N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description PolarHVTM Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series PolarHV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5.5V @ 50μA
Gate Charge (Qg) (Maximum) @ Vgs 14.2nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 750pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 100W (Tc)
Rds On (Maximum) @ Id, Vgs 1.7 Ohm @ 2.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 1191287-IXTP5N60P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXTP5N60P
Introduction Date May 09, 2006
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IXTP5N60P CAD Model

Description

The IXYS IXTP5N60P is a MOSFET technology-based semiconductor component suitable for use in various applications.

  • Series: PolarHV
  • Package: TO-220-3
  • Maximum Drain-Source Voltage: 600V
  • Continuous Drain Current: 5A (Tc) @ 25°C
  • Maximum Power Dissipation: 100W (Tc)
  • Gate-Source Threshold Voltage: 5.5V @ 50μA
  • Gate Charge (Qg): 14.2nC @ 10V
  • Input Capacitance (Ciss): 750pF @ 25V
  • Maximum Vgs: ±30V
  • Rds On: 1.7 Ohm @ 2.5A, 10V
  • Popular choice: for discrete semiconductor products and is available in limited supply.

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