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IXTP6N100D2

Part No IXTP6N100D2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 6A TO220AB / N-Channel 1000 V 6A (Tc) 300W (Tc) Through Hole TO-220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220-3
Case / Package TO-220-3
Base Product Number IXTP6
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1323895-IXTP6N100D2
Ultra Librarian 3D Model Ultra Librarian IXTP6N100D2 CAD Model

Description

The IXTP6N100D2 is an N-channel MOSFET transistor manufactured by IXYS.

  • Manufacturer: IXYS
  • FET Type: Depletion Mode
  • Drain to Source Voltage (Vdss): 1000 V
  • Continuous Drain Current (Id) @ 25°C: 6A (Tc)
  • Maximum Rds On @ Id, Vgs: 2.2Ohm @ 3A, 0V
  • Maximum Gate Charge (Qg) @ Vgs: 95 nC @ 5 V
  • Maximum Input Capacitance (Ciss) @ Vds: 2650 pF @ 25 V
  • Power Dissipation: 300W (Tc)
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Package: TO-220-3
  • Mounting: Through Hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.8944 $59.5776
9+ $12.2211 $109.9899
13+ $11.8392 $153.9096
18+ $11.4573 $206.2314
23+ $11.0753 $254.7319
31+ $9.9296 $307.8176
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 140 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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