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Same model may have multiple batches, images only for reference.
IXTP80N10T Real Image
Same model may have multiple batches, images only for reference.

IXTP80N10T

Part No IXTP80N10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 80A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 3040pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205714-IXTP80N10T
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXTP80N10T CAD Model

Description

The IXYS electronic component is a MOSFET type N-channel polarity that has gained medium popularity in the market.

  • Manufacturer: IXYS
  • Win Source Part Number: 205714-IXTP80N10T
  • Case/Package: TO-220AB
  • Maximum Rds On: 14 mOhm @ 25A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Continuous Drain Current: 80A (Tc) @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6983 $59.4405
85+ $1.3935 $118.4475
130+ $1.3500 $175.5000
180+ $1.3065 $235.1700
230+ $1.2629 $290.4670
310+ $1.1323 $351.0130
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Availability: 6,779 pieces
MOQ: 35 pcs
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