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Same model may have multiple batches, images only for reference.
IXTQ14N60P Real Image
Same model may have multiple batches, images only for reference.

IXTQ14N60P

Part No IXTQ14N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 14A TO-3P
Datasheet
IXTQ14N60P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 2500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 550 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049914-IXTQ14N60P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTQ14N60P CAD Model

Description

The IXYS IXTQ14N60P is an N-Channel MOSFET with a drain-source breakdown voltage of 600V.

  • Drain-Source Breakdown Voltage: 600V
  • Power Dissipation: 300W (Tc)
  • Continuous Drain Current: 14A (Tc) @ 25°C
  • Drive Voltage: 10V (max Rds On, min Rds On)
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 550 mOhm @ 7A, 10V
  • Case/Package: TO-3P
  • Dimensions: TO-3P-3, SC-65-3
  • Mounting: Through Hole
  • Operating Temperature: -55°C to 150°C (TJ)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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