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IXTQ26P20P

Part No IXTQ26P20P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 26A TO3P / P-Channel 200 V 26A (Tc) 300W (Tc) Through Hole TO-3P
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series PolarP™
Package Tube
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2740 pF @ 25 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
Base Product Number IXTQ26
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355080-IXTQ26P20P
Ultra Librarian 3D Model Ultra Librarian IXTQ26P20P CAD Model

Description

The IXTQ26P20P is a P-channel MOSFET transistor manufactured by IXYS.

  • Series: PolarP™
  • Package: Tube
  • Operating Temperature Range: -55°C to 175°C
  • Drain-to-Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 26A @ 25°C
  • Gate Charge (Qg): 56nC @ 10V
  • Maximum On-Resistance (Rds On): 170mOhm @ 13A and 10V
  • Mounting: Through Hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.0722 $56.5054
14+ $7.5614 $105.8596
21+ $7.3059 $153.4239
30+ $6.7950 $203.8500
39+ $6.5396 $255.0444
48+ $6.2841 $301.6368
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 600 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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