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IXTQ52N30P

Part No IXTQ52N30P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 52A TO-3P
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 3490pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 400W (Tc)
Maximum Rds On at Id,Vgs 66 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 205716-IXTQ52N30P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTQ52N30P CAD Model

Description

The IXTQ52N30P is a N-Channel MOSFET manufactured by IXYS, designed for use in Discrete Semiconductor Products.

  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current @ 25°C: 52A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 66 mOhm @ 26A, 10V
  • Package: TO-3P-3, SC-65-3 case
  • Mounting: Through hole
  • Maximum Power Dissipation: 400W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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