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IXTT500N04T2

Part No IXTT500N04T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 500A TO268 / N-Channel 40 V 500A (Tc) 1000W (Tc) Surface Mount TO-268AA
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchT2™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 500A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 405 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 25000 pF @ 25 V
Power Dissipation (Max) 1000W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Base Product Number IXTT500
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346775-IXTT500N04T2
Ultra Librarian 3D Model Ultra Librarian IXTT500N04T2 CAD Model

Description

The IXYS 1346775-IXTT500N04T2 is a N-channel MOSFET transistor.

  • Manufacturer: IXYS
  • FET Type: MOSFET
  • Channel Type: N-Channel
  • Drain to Source Voltage: 40 V
  • Continuous Drain Current: 500A
  • Rds On Resistance: 1.6mOhm @ 100A and 10V
  • Power Dissipation: 1000W @ Tc
  • Mounting Type: Surface Mount
  • Package: TO-268-3, D²Pak (2 Leads + Tab), TO-268AA
  • Gate Charge: 405 nC @ 10V
  • Input Capacitance: 25000 pF @ 25V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Series: TrenchT2™

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