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Same model may have multiple batches, images only for reference.
IXTU12N06T Real Image
Same model may have multiple batches, images only for reference.

IXTU12N06T

Part No IXTU12N06T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 12A TO-251
Datasheet
IXTU12N06T Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 25μA
Max Gate Charge 3.4nC @ 10V
Max Input Capacitance 256pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-251
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1049961-IXTU12N06T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTU12N06T CAD Model

Description

The IXTU12N06T is an N-channel MOSFET manufactured by IXYS.

  • Channel Type: N-channel
  • Maximum Power Dissipation: 33W @ Tc
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 12A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 25μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum On-Resistance: 85 mOhm @ 6A and 10V
  • Technology: MOSFET
  • Mounting: Through Hole
  • Suitable For: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $11.0199 $66.1194
13+ $9.0425 $117.5525
20+ $8.7595 $175.1900
28+ $8.4765 $237.3420
36+ $8.1947 $295.0092
48+ $7.3470 $352.6560
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Availability: 17,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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