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Same model may have multiple batches, images only for reference.
IXTV02N250S
Same model may have multiple batches, images only for reference.

IXTV02N250S

Part No IXTV02N250S
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel Enhancement Mode Fast Intrinsic Diode
Datasheet
IXTV02N250S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 2500V
Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 7.4nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 116pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 83W (Tc)
Rds On (Maximum) @ Id, Vgs 450 Ohm @ 50mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PLUS-220SMD
Package PLUS-220SMD
Win Source Part Number 1191302-IXTV02N250S
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXTV02N250S
Introduction Date September 10, 2009
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IXTV02N250S CAD Model

Description

IXYS presents the IXTV02N250S, a high-performance MOSFET designed for use in a variety of applications.

  • Applications: power management, industrial, portable devices, and consumer electronics
  • Drain-Source Voltage: 2500V
  • Continuous Drain Current: 200mA
  • On-State Resistance: 450 Ohm @ 50mA, 10V
  • Gate-Source Voltage: ±20V
  • Operating Temperature: -55°C to 150°C
  • Power Dissipation: 83W
  • Package: PLUS-220SMD
  • Pack Quantity: 1
  • Alternative Parts: STW38NB20, FQA48N20_NL, and IRFP260SN

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