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Same model may have multiple batches, images only for reference.
IXTV26N60P Real Image
Same model may have multiple batches, images only for reference.

IXTV26N60P

Part No IXTV26N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 26A PLUS220 / N-Channel 600 V 26A (Tc) 460W (Tc) Through Hole PLUS220
Datasheet
IXTV26N60P Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series PolarHV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4150 pF @ 25 V
Power Dissipation (Max) 460W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS220
Package / Case TO-220-3, Short Tab
Base Product Number IXTV26
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346776-IXTV26N60P
Ultra Librarian 3D Model Ultra Librarian IXTV26N60P CAD Model

Description

The IXYS IXTV26N60P is an N-channel MOSFET with a maximum drain-source voltage of 600V and a continuous drain current of 26A at 25°C.

  • Manufacturer: IXYS
  • FET Type: MOSFET
  • Channel Type: N-Channel
  • Drain-Source Voltage: 600V
  • Continuous Drain Current: 26A @ 25°C
  • Maximum On-Resistance: 270mOhm @ 500mA and 10V gate-source voltage
  • Package: TO-220-3
  • Operating Temperature Range: -55°C to 150°C
  • Suitable for: discrete semiconductor products
  • Applications: automotive, communications & networking, computers & computer peripherals, consumer electronics, and industrial

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